CHM1273PT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor voltage 60 volts current 2 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . * rugged and reliable. * high saturation current capability. absolute maximum ratings t a = 25c unless otherwise noted symbol parameter CHM1273PT units v dss drain-source voltage 60 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 0.5 w t stg storage temperature range -55 to 150 c 2 (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 4 t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature 4. guaranteed by design , not subject to production trsting c i r c u i t s d g 2 1 3 * small surface mounting type. (sc-59) * 1273 marking s c - 5 9 / s o t - 3 4 6 (1) (2) (3) dimensions in millimeters 0.95 0.95 1.7~2.1 2.7~3.1 0.89~1.3 0.3~0.51 0.085~0.2 0~0.1 1.2~1.9 2.1~2.95 0.3~0.6 sc-59/sot-346
rating characteristic curves ( CHM1273PT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =10v , i d = 0 . 5 a r ds(on) static drain-source on-resistance w vgs=10v, id= 0. 5a t on turn-on time ns v dd = 25 v i d = 0. 5a , v g s = 10 v t r rise time 1 0 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 10 a u a 60 v u a i gssf dss zero gate voltage drain current v ds gate-body leakage = 6 gate-body leakage 0 v, v v gs gs = 2 0 v, = 0 v v ds = 0 v a +10 -10 v gs = - 20v, v ds = 0 v v gs (th) gate threshold voltage v ds = 10v, i d = 1ma 1.0 v vgs=4.0v, id =0. 5a t f fall time turn-off time t off rgen= 10 w , (note 2) (note 4) 2. 5 ms 15 35 380 120 i i gssr forward transconductance ms dynamic characteristics input capacitance reverse transfer capacitance output capacitance g fs c iss c oss c rss v ds = 10v, v gs = 0v, f = 1.0 mhz 220 105 16 pf 1.7 0.65 1.00 400 v ds =10v, i d = 0.5a 400 switching characteristics rl= 50 w 0.3 1 0.24
t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s rating characteristic curves ( CHM1273PT )
rating characteristic curves ( CHM1273PT )
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